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Title: :  Investigation of electron effective mass in C.B. of dilute nitride semiconductors
PaperId: :  12856
Published in:   International Journal Of Advance Research And Innovative Ideas In Education
Publisher:   IJARIIE
e-ISSN:   2395-4396
Volume/Issue:    Volume 6 Issue 5 2020
DUI:    16.0415/IJARIIE-12856
Licence: :   IJARIIE is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

Author NameAuthor Institute
Ahad Khan PyawaraiPhysics Department, Electromechancs Faculty, Kabul, Afghanistan

Abstract

electronics
Semiconductor, HBT, effective mass
Dilute Nitride Semiconductor (low nitrogen-containing ternary and quaternary alloys) have recently attracted much attention due to their fundamental properties promising for device applications in optoelectronics and photonics such as highly efficient near infrared lasers, multi-junction solar cells, as well as heterojunction bipolar transistors (HBTs). The effect of N on the electronic band structure in dilute III-N-V nitrides has been explained in terms of a band anticrossing interaction between highly localized N states and the extended conduction band states of the semiconductor matrix. The interaction leads to a splitting of the conduction band into two non-parabolic subbands. The downward shift of the lower subband edge relative to the valence band is responsible for the reduction of the fundamental band gap. The profound effects on the optical and electrical properties of the dilute nitrides such as the significant increase in the electron effective mass can be quantitatively account for using this model.

Citations

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IJARIIE Ahad Khan Pyawarai. "Investigation of electron effective mass in C.B. of dilute nitride semiconductors" International Journal Of Advance Research And Innovative Ideas In Education Volume 6 Issue 5 2020 Page 1328-1332
MLA Ahad Khan Pyawarai. "Investigation of electron effective mass in C.B. of dilute nitride semiconductors." International Journal Of Advance Research And Innovative Ideas In Education 6.5(2020) : 1328-1332.
APA Ahad Khan Pyawarai. (2020). Investigation of electron effective mass in C.B. of dilute nitride semiconductors. International Journal Of Advance Research And Innovative Ideas In Education, 6(5), 1328-1332.
Chicago Ahad Khan Pyawarai. "Investigation of electron effective mass in C.B. of dilute nitride semiconductors." International Journal Of Advance Research And Innovative Ideas In Education 6, no. 5 (2020) : 1328-1332.
Oxford Ahad Khan Pyawarai. 'Investigation of electron effective mass in C.B. of dilute nitride semiconductors', International Journal Of Advance Research And Innovative Ideas In Education, vol. 6, no. 5, 2020, p. 1328-1332. Available from IJARIIE, https://ijariie.com/AdminUploadPdf/Investigation_of_electron_effective_mass_in_C_B__of_dilute_nitride_semiconductors_ijariie12856.pdf (Accessed : 07 October 2020).
Harvard Ahad Khan Pyawarai. (2020) 'Investigation of electron effective mass in C.B. of dilute nitride semiconductors', International Journal Of Advance Research And Innovative Ideas In Education, 6(5), pp. 1328-1332IJARIIE [Online]. Available at: https://ijariie.com/AdminUploadPdf/Investigation_of_electron_effective_mass_in_C_B__of_dilute_nitride_semiconductors_ijariie12856.pdf (Accessed : 07 October 2020)
IEEE Ahad Khan Pyawarai, "Investigation of electron effective mass in C.B. of dilute nitride semiconductors," International Journal Of Advance Research And Innovative Ideas In Education, vol. 6, no. 5, pp. 1328-1332, Sep-Oct 2020. [Online]. Available: https://ijariie.com/AdminUploadPdf/Investigation_of_electron_effective_mass_in_C_B__of_dilute_nitride_semiconductors_ijariie12856.pdf [Accessed : 07 October 2020].
Turabian Ahad Khan Pyawarai. "Investigation of electron effective mass in C.B. of dilute nitride semiconductors." International Journal Of Advance Research And Innovative Ideas In Education [Online]. volume 6 number 5 (07 October 2020).
Vancouver Ahad Khan Pyawarai. Investigation of electron effective mass in C.B. of dilute nitride semiconductors. International Journal Of Advance Research And Innovative Ideas In Education [Internet]. 2020 [Cited : 07 October 2020]; 6(5) : 1328-1332. Available from: https://ijariie.com/AdminUploadPdf/Investigation_of_electron_effective_mass_in_C_B__of_dilute_nitride_semiconductors_ijariie12856.pdf
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