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Title: :  VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES
PaperId: :  18008
Published in:   International Journal Of Advance Research And Innovative Ideas In Education
Publisher:   IJARIIE
e-ISSN:   2395-4396
Volume/Issue:    Volume 8 Issue 4 2022
DUI:    16.0415/IJARIIE-18008
Licence: :   IJARIIE is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

Author NameAuthor Institute
MOHAMMED UBAIDULLAHMEWAR UNIVERSITY
GAURAV SHARMAMEWAR UNIVERSITY

Abstract

ELECTRONICS AND COMMUNICATION
NANOSWITCH,ULTRAFAST,VLSI
The current techniques for chip design put an emphasis on reducing the amount of power that is used. The amount of power that is lost in complementary metal oxide semiconductor (CMOS) devices has skyrocketed as their sizes have expanded dramatically. The power is being distributed over too wide of an area, which might result in the generation of more heat and thus causes an increase in temperature. According to recent reports, Intel's power viscosity has reached 1000 W/ cm2 and is quickly nearing the number of 10,000 W/ cm2, which is equivalent to the radiation that is emitted from the surface of the sun. Nanometer-scale CMOS provides issues to dependability due to the fact that silicon begins to melt at a temperature of 1687 degrees Kelvin. We came up with a novel armature to be used in the construction of nanoelectromechanical switches so that we could circumvent this problem. This new armature has produced results that have a leakage current of virtually nil and an operating voltage of just one volt resonating at a frequency of one gigahertz and leaving a trace on the nanoscale scale The "off" resistances of microelectromechanical system switches, often known as MEMS switches, are very high, while the "on" resistances are astonishingly low. Their switching voltages are often in the high range (between 5 and 50 V), their switching frequencies are typically in the low MHz range (1 MHz), and their leftovers are typically in the very large MHz range ( numerous um2). We were able to develop and create a bias that had extremely low actuation voltages and really quick speed by using tuning chopstick figures that are amenable to typical CMOS fabrication techniques. This allowed us to design and construct a bias. The actuation voltage is reduced by a factor of 1.4 thanks to this one-of-a-kind switch figure, while the switching speed is increased by a factor of 2. The ground plane component of this system is implemented via the use of a stake ray. The ground aircraft and the main ray of the switch will travel in the same direction when the switch is switched on. Because the mass's center of gravity does not shift while the operation is taking place, the switching speed has been boosted by a factor of two as a direct result of this. These tunable chopstick nanoelectromechanical switches have the potential to be conveniently implemented in VLSI (Veritably Large Scale Integration) circuits for the purpose of effective leakage power management. This thesis will examine topics such as nanoelectromechanical system (NEMS) topologies, characteristics, leakage reduction methodologies, bias and piezo selector structure reliability for evaluating switch contact resistance and lifespan, as well as other pertinent information.

Citations

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IJARIIE MOHAMMED UBAIDULLAH, and GAURAV SHARMA. "VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES" International Journal Of Advance Research And Innovative Ideas In Education Volume 8 Issue 4 2022 Page 2041-2050
MLA MOHAMMED UBAIDULLAH, and GAURAV SHARMA. "VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES." International Journal Of Advance Research And Innovative Ideas In Education 8.4(2022) : 2041-2050.
APA MOHAMMED UBAIDULLAH, & GAURAV SHARMA. (2022). VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES. International Journal Of Advance Research And Innovative Ideas In Education, 8(4), 2041-2050.
Chicago MOHAMMED UBAIDULLAH, and GAURAV SHARMA. "VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES." International Journal Of Advance Research And Innovative Ideas In Education 8, no. 4 (2022) : 2041-2050.
Oxford MOHAMMED UBAIDULLAH, and GAURAV SHARMA. 'VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES', International Journal Of Advance Research And Innovative Ideas In Education, vol. 8, no. 4, 2022, p. 2041-2050. Available from IJARIIE, https://ijariie.com/AdminUploadPdf/VLSI_POWER_MANAGEMENT_THROUGH_ULTRAFAST_NANO_ELECTROMECHANICAL_SWITCHES_ijariie18008.pdf (Accessed : ).
Harvard MOHAMMED UBAIDULLAH, and GAURAV SHARMA. (2022) 'VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES', International Journal Of Advance Research And Innovative Ideas In Education, 8(4), pp. 2041-2050IJARIIE [Online]. Available at: https://ijariie.com/AdminUploadPdf/VLSI_POWER_MANAGEMENT_THROUGH_ULTRAFAST_NANO_ELECTROMECHANICAL_SWITCHES_ijariie18008.pdf (Accessed : )
IEEE MOHAMMED UBAIDULLAH, and GAURAV SHARMA, "VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES," International Journal Of Advance Research And Innovative Ideas In Education, vol. 8, no. 4, pp. 2041-2050, Jul-Aug 2022. [Online]. Available: https://ijariie.com/AdminUploadPdf/VLSI_POWER_MANAGEMENT_THROUGH_ULTRAFAST_NANO_ELECTROMECHANICAL_SWITCHES_ijariie18008.pdf [Accessed : ].
Turabian MOHAMMED UBAIDULLAH, and GAURAV SHARMA. "VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES." International Journal Of Advance Research And Innovative Ideas In Education [Online]. volume 8 number 4 ().
Vancouver MOHAMMED UBAIDULLAH, and GAURAV SHARMA. VLSI POWER MANAGEMENT THROUGH ULTRAFAST NANO ELECTROMECHANICAL SWITCHES. International Journal Of Advance Research And Innovative Ideas In Education [Internet]. 2022 [Cited : ]; 8(4) : 2041-2050. Available from: https://ijariie.com/AdminUploadPdf/VLSI_POWER_MANAGEMENT_THROUGH_ULTRAFAST_NANO_ELECTROMECHANICAL_SWITCHES_ijariie18008.pdf
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