MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC

March 2019
Vol-5, Issue-2
Paper ID: 9692
ISSN: 2395-4396
Downloads: 72
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Abstract & Details

Research Area
Electronics Communication engineering
Keywords
Data segmentation cell upsets correction codes
Abstract
The presented project presents the implementation and evaluation of the Data Segmentation Section Code (DSSC), a new algorithm for the detection and correction of multiple transient faults in volatile memories with low cost implementation. DSSC is an ECC based on two-dimensional (2D) codes, that aims to correct and detect MCUs in memories The proposal in split the data bits in three regions was elaborated in order to select a specific group of bit to operate the correction process. By calculating parity and diagonal check bits and syndrome bits the errors are detected and corrected region wise .This approach reduces considerably the area and power cost. Our proposed system has been coded in Verilog HDL and simulated using Xilinx 12.1

Author Information

# Name Institute / Affiliation
1 BEULA SHARON M PRINCE SHRI VENKATESHWARA PADMAVATHY ENGINEERING COLLEGE
2 GULHAAR S PRINCE SHRI VENKATESHWARA PADMAVATHY ENGINEERING COLLEGE

How to Cite

Use the following formats to cite this article in your research.

APA Style
M, BEULA SHARON & S, GULHAAR (2019). MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC. International Journal of Advance Research and Innovative Ideas In Education, 5(2), 625-628.
MLA Style
M, BEULA SHARON, and GULHAAR S. "MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC." International Journal of Advance Research and Innovative Ideas In Education, vol. 5, no. 2, 2019, pp. 625-628.
IEEE Style
BEULA SHARON M and GULHAAR S, "MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC," International Journal of Advance Research and Innovative Ideas In Education, vol. 5, no. 2, pp. 625-628, 2019.
Vancouver Style
M BEULA SHARON, S GULHAAR. MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC. International Journal of Advance Research and Innovative Ideas In Education. 2019;5(2):625-628.
Harvard Style
M, BEULA SHARON & S, GULHAAR (2019) 'MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC', International Journal of Advance Research and Innovative Ideas In Education, 5(2), pp. 625-628.
Chicago Style
M, BEULA SHARON and GULHAAR S. "MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC." International Journal of Advance Research and Innovative Ideas In Education 5, no. 2 (2019): 625-628.
Turabian Style
M, BEULA SHARON and GULHAAR S. "MULTIPLE CELL UPSET TOLERANT ERROR DETECTION AND CORRECTION CODE FOR SEMICONDUCTOR MEMORIES USING DSSC." International Journal of Advance Research and Innovative Ideas In Education 5, no. 2 (2019): 625-628.

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